PART |
Description |
Maker |
MX26F128J3XCC-15 MX26F128J3XCC-12 MX26F128J3TC-12 |
Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY 旺宏NBit商标家庭128M的内存[x8/x16]V页模式eLiteFlash商标记忆
|
Electronic Theatre Controls, Inc.
|
MX26L12811MC MX26L12811MC-12 |
128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
|
MXIC ETC[ETC]
|
MB84SF6H6H6L2-70 MB84SF6H6H6L2-70PBS |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
Spansion Inc.
|
MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的(x16)的快闪记忆2M的(x16)的移动FCRAMTM
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
|
MB84VP23481FK-70PBS MB84VP23481FK-70 |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
SPANSION[SPANSION]
|
HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
S29GL01GP90FFI012 S29GL01GP90FFIR12 S29GL128P11FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc. SPANSION LLC
|
M36DR432C M36DR432CA10ZA6T M36DR432CA85ZA6T M36DR4 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
MX23L12811 MX23L12811MC-12 23L12811-10 23L12811-12 |
128M-BIT (8M x 16) MASK ROM WITH PAGE MODE(SOP ONLY)
|
MXIC MCNIX[Macronix International]
|
AT49SN12804 |
128M bit, 1.8-Volt Page Mode Flash Memory.
|
Atmel
|